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Rambus Develops R+ DDR4/3 PHY on Samsung 28nm LPP Process

Rambus Develops R+ DDR4/3 PHY on Samsung 28nm LPP Process

PC components Feb 10,2015 0

Rambus has developed an R+ DDR4/3 PHY on the Samsung 28nm LPP process. The new design has been characterized at a system level, and can be easily integrated into a SoC. The Rambus R+ DDR4 multi-modal memory PHY offers performance and is compatibile with industry standard DDR4, and DDR3 interfaces. Designed for server, compute, networking and consumer applications, the R+ DDR4 PHY delivers configuration options for both area/power optimized consumer applications and performance intensive compute applications. The DDR4 IP product supports data rates from 800 to 3200Mbps in a low-power process and is available in both PoP and discrete packages.

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Latest News

G.SKILL Announces T5 Neo Series DDR5-6400 CL38 512GB (64GBx8) Overclocked R-DIMM Memory Kit with AMD EXPO Support for AMD Ryzen Threadripper PRO Workstations
PC components

G.SKILL Announces T5 Neo Series DDR5-6400 CL38 512GB (64GBx8) Overclocked R-DIMM Memory Kit with AMD EXPO Support for AMD Ryzen Threadripper PRO Workstations

ZOTAC to Launch GeForce RTX 5090 ARCTICSTORM AIO & GeForce RTX 5060 Low Profile
GPUs

ZOTAC to Launch GeForce RTX 5090 ARCTICSTORM AIO & GeForce RTX 5060 Low Profile

KIOXIA Commences Sample Shipments of 9th Generation BiCS FLASH 512Gb TLC Devices
Enterprise & IT

KIOXIA Commences Sample Shipments of 9th Generation BiCS FLASH 512Gb TLC Devices

Synology Unveils DiskStation DS225 Plus
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