Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has produced the world's first DDR3 DRAM (dynamic random access memory) device. The new 512Mb DDR3 DRAM, which can process data at the extraordinary rate of 1,066Mbps (the data equivalent of 8,000 newspaper pages a second), will be available in early 2006. DDR3 (double data rate) will become the standard for the next generation of ultra-fast, low-power-consuming memory chips used in notebook computers, desktops and servers.

"Our success here with DDR3 continues our relentless push to bring the most advanced memory devices to the market at the fastest possible pace," said Tom Quinn, senior vice president, memory sales and marketing, Samsung Semiconductor.

Samsung's DDR3 prototype is the first memory chip to operate on just 1.5 volts, making it less of a drain on batteries, in an increasingly wireless world. The operation speed of DDR3 doubles that of DDR2 and quadruples DDR, opening the platform to gigabit-rate data processing. It also will make use of highly advanced 80nm production technology and include new functionality to permit its unprecedented processing speeds, such as self-driver calibration and data synchronization.

Samsung Electronics was the first to produce a DDR DRAM and DDR2 DRAM in 1998 and 2001 respectively. In December 2003, the JEDEC standards organization presented Samsung with its Technical Recognition Award for the company's efforts in standardizing DDR2. Now, Samsung Electronics 512Mb DDR3 prototype will open the door to a new era of ultra-fast computer application processing with reduced power consumption, while the company plays a major role in DDR3 standardization.

Samsung's portfolio for next-generation DRAMs includes XDR, DDR2 and now the DDR3 memory.

IDC, the semiconductor market research firm, predicts that the first DDR3 DRAMs will be sold in 2006 and that the chip will represent 65% of the entire DRAM market in 2009.