Samsung is expanding its advanced foundry process technology offerings with the fourth-generation 14-nanometer (nm) process (14LPU) and the third-generation 10nm process (10LPU). Samsung presented these new technology offerings at the Samsung Foundry Forum to foundry customers and partners. The event was held at its Device Solutions America headquarters today, where the company elaborated on the details of new technology offerings including 14LPU and 10LPU.

Samsung said that its fourth-generation 14nm process technology, 14LPU, delivers higher performance at the same power and design rules compared to its third-generation 14nm process (14LPC). 14LPU will be optimally suited for high-performance and compute-intensive applications.

Samsung’s third-generation 10nm process, 10LPU, will provide area reduction compared to its previous generations (10LPE and 10LPP). Due to limitations of current lithography technologies, Samsung says that the 10LPU will be the most cost-effective cutting-edge process technology in the industry. Together with the second-generation 10nm process (10LPP) that offers an extra performance boost from 10LPE, 10LPU is positioned to meet the needs of an extended range of applications that can benefit from the 10nm process.

On top of the new process offerings, Samsung also updated its 7nm EUV process development status and showcased its 7nm EUV wafer.

"After we announced the industry’s first 10nm mass production in mid-October, we have now also expanded our lineup with new foundry offerings, 14LPU and 10LPU," said Ben Suh, Senior Vice President of foundry marketing at Samsung Electronics. "Samsung is very confident with our technology definitions that provide design advantages on an aggressive process with manufacturability considerations. We have received tremendous positive market feedback and are looking forward to expanding our leadership in the advanced process technology space."

Process design kits (PDK) for 14LPU and 10LPU process technologies will be available during the second quarter of 2017.