Samsung Introduces 60nm Processing for 2GB DDR2 DRAM
Samsung has developed the 60nm-class 2Gb DDR2 DRAM and will begin mass production later this year.
Compared with 80nm 2Gb DDR2, the 60nm-class with a speed of 800Mbps has improved DRAM performance up to 20%. Moreover, production efficiency for the 2Gb DDR2 will be enhanced by about 40% using the finer 60nm-class process technology.
Besides greater efficiencies, the 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions, which will accelerate the move toward higher densities in high-end market segments.
Said to be the first 60nm-class 2Gb DDR2 DRAM in the industry, the high-capacity DRAM is well suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
Samsung supplies the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
Besides greater efficiencies, the 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions, which will accelerate the move toward higher densities in high-end market segments.
Said to be the first 60nm-class 2Gb DDR2 DRAM in the industry, the high-capacity DRAM is well suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
Samsung supplies the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
