Breaking News

Shuttle announces DN11H at InfoComm 2025 Crucial announces T710 PCIe Gen5 NVMe SSD and X10 Portable SSD LIAN LI Presents Prototype Cases, AIO, and PSU Series at Computex 2025 CORSAIR at Computex 2025 ENDORFY introduces Celeris 1800 keyboard

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map

Search form

Samsung Says Semiconductor Technology Can Easily Scale Down to 5nm

Samsung Says Semiconductor Technology Can Easily Scale Down to 5nm

Enterprise & IT Feb 27,2015 0

Despite concerns for the demise of scaling, Samsung says that high performance in electronics systems for the coming decades is expected, thanks to innovations in materials, structures and processes. Kinam Kim, president of Samsung Electronics, discussed the latest trends of semiconductor scaling techniques and the development status at the company during a keynote speech at 2015 IEEE International Solid-State Circuits Conference (ISSCC).

Kim spoke on the potentials of semiconductor technologies, saying, "They can be scaled down to 5nm without any fundamental technical difficulty, and further scaling is possible."

He announced that Samsung has already prototyped a device featuring FinFET with a gate length of just 3.8nm. In terms of the resolution of lithography technology for semiconductor volume production, it is possible to realize a resolution of 3.25mm by combining EUV (extreme ultraviolet) and quadruple patterning, Kim said. Though the resolution of resist technology is currently 8nm, it will be further scaled down because the company is currently developing a resist material for EUV technology, he said.

Samsung semiconductor started volume production of FinFET using 14nm process technology in January 2015. Though they can be scaled down to about 7nm with FinFET, GAA (gate all around) and tunnel FET will be the mainstream after that, Kim said.

Regarding DRAM, Samsung is currently using 20nm process technology, but it is possible to realize 1Xnm process technology, Kim said.

"If the current planar NAND technology is further scaled down, the capacity coupling with the surroundings of elements will rapidly increase," Kim said, indicating that process scale-down is getting stuck at 1Xnm.

Vertical NAND (V-NAND) has small capacity coupling with the surroundings and is a promising candidate for high-density and multi-valued 3D stacking. The maximum number of the layers of 3D V-NAND was 24 in 2013 abd was further increased to 32 in 2014.

"The number of layers will be larger than 40 in 2015 and larger than 100 in the future, making it possible to develop a 1-Tbit 3D V-NAND chip," Kim said.

Tags: SAMSUNG
Previous Post
Toshiba Develops Multicore SoC For Image-Recognition Applications
Next Post
Ericsson Sues Apple Over Patent Infringement

Related Posts

  • Galaxy AI Is Coming to New Galaxy Watch for More Motivational Health

  • Samsung Introduces Galaxy A55 5G and Galaxy A35 5G

  • Samsung’s New AI PC, Galaxy Book4 Series, Available Globally Beginning February 26

  • Samsung and Google Cloud Join Forces to Bring Generative AI to Samsung Galaxy S24 Series

  • Samsung Galaxy S24 Ultra Creates New Standards of Durability and Visual Clarity With Corning® Gorilla® Armor

  • Samsung announces 2024 Neo QLED, MICRO LED, OLED

  • Samsung Electronics Expands Odyssey Gaming Monitor Lineup With New OLED Models at CES 2024

  • Samsung Adds More Devices to Its Self-Repair Program, Including Foldables for the First Time

Latest News

Shuttle announces DN11H at InfoComm 2025
Enterprise & IT

Shuttle announces DN11H at InfoComm 2025

Crucial announces T710 PCIe Gen5 NVMe SSD and X10 Portable SSD
Enterprise & IT

Crucial announces T710 PCIe Gen5 NVMe SSD and X10 Portable SSD

LIAN LI Presents Prototype Cases, AIO, and PSU Series at Computex 2025
Cooling Systems

LIAN LI Presents Prototype Cases, AIO, and PSU Series at Computex 2025

CORSAIR at Computex 2025
Cooling Systems

CORSAIR at Computex 2025

ENDORFY introduces Celeris 1800 keyboard
PC components

ENDORFY introduces Celeris 1800 keyboard

Popular Reviews

be quiet! Light Loop 360mm

be quiet! Light Loop 360mm

be quiet! Dark Mount Keyboard

be quiet! Dark Mount Keyboard

be quiet! Dark Rock 5

be quiet! Dark Rock 5

G.skill Trident Z5 Neo RGB DDR5-6000 64GB CL30

G.skill Trident Z5 Neo RGB DDR5-6000 64GB CL30

Arctic Liquid Freezer III 420 - 360

Arctic Liquid Freezer III 420 - 360

Crucial Pro OC 32GB DDR5-6000 CL36 White

Crucial Pro OC 32GB DDR5-6000 CL36 White

Crucial T705 2TB NVME White

Crucial T705 2TB NVME White

be quiet! Light Base 600 LX

be quiet! Light Base 600 LX

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed