Toshiba Memory has started sampling the first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices.
The new lineup utilizes the company’s 96-layer BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13mm package. It is available in three capacities: 128 gigabytes, 256GB and 512GB. The memory are designed for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.
The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management for simplified system development.
All three devices are compliant with JEDEC UFS Ver. 3.0, including HS-GEAR4, which has a theoretical interface speed of up to 11.6 Gigabits per second per lane (x2 lanes = 23.2Gbps) while also supporting features that suppress increases in power consumption. Sequential read and write performance of the 512GB device are improved by approximately 70 percent and 80 percent, respectively, over previous generation devices (256GB device “THGAF8T1T83BAIR”)