Toshiba Memory Launches Faster NAND Flash Memory Products for Embedded Applications
Toshiba Memory Corporation has launched its second-generation line-up of NAND flash memory products for embedded applications with increased performance and capacity.
The new Serial Interface NAND products are compatible with the Serial Peripheral Interface (SPI) and are suited for a wide range of consumer, industrial and communication applications.
Toshiba is starting sample shipments today with mass production scheduled to begin from October onwards.
Due to its compatibility with the widely used SPI, the Serial Interface NAND products can be utilized as SLC NAND flash memory products with a low pin count, small package and large capacity.
In order to support high-speed data transfers, the new second-generation Serial Interface NAND products offer improved performance compared to existing first-generation products, including 133 megahertz (MHz) operating frequency and program x4 mode. Furthermore, an 8 gigabit (1 gigabyte) device has been added to the line-up to respond to demands for larger memory capacity.
Outline of the New Products
Part Number |
Capacity |
I/O |
Voltage |
Package |
Mass Production |
TC58CVG0S3HRAIJ |
1Gb
|
x1, x2, x4
|
3.3V |
8pin WSON (6mm x 8mm) |
Oct. 2019 |
TC58CYG0S3HRAIJ |
1.8V |
Oct. 2019 |
|||
TC58CVG1S3HRAIJ |
2Gb
|
3.3V |
Oct. 2019 |
||
TC58CYG1S3HRAIJ |
1.8V |
Oct. 2019 |
|||
TC58CVG2S0HRAIJ |
4Gb
|
3.3V |
Oct. 2019 |
||
TC58CYG2S0HRAIJ |
1.8V |
Oct. 2019 |
|||
TH58CVG3S0HRAIJ |
8Gb |
3.3V |
Dec. 2019 |
||
TH58CYG3S0HRAIJ |
1.8V |
Dec. 2019 |
Key Features
Capacity |
1Gb, 2Gb, 4Gb, 8Gb |
Page Sizes |
2KByte (1Gb, 2Gb), 4KByte (4Gb, 8Gb) |
Interface |
Serial Peripheral Interface Mode 0, Mode 3 |
Power Supply Voltage |
2.7 to 3.6V, 1.7 to 1.95V |
Operating Temperature Range |
-40 oC to 85 oC |
Features |
|
