STT-MRAM Coming to Industrial and IoT Applications
Everspin Technologies, Inc. is developing STT-MRAM specifically for Industrial and IoT applications.
The company said at the Embedded World in Germany that the new...
Everspin Releases Design Guide for using 1 Gb STT-MRAM with Xilinx DDR4 FPGA Controller
Everspin Technologies, Inc. has released a comprehensive design guide to streamline the integration of its 1 Gigabit (Gb) Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)...
Globalfoundries Says 22nm eMRAM Could Displace eFlash
Globalfoundries is promoting its eMRAM technology as a potential high-volume embedded flash (eFlash) replacement.
GF’s 22nm FD-SOI (22FDX) embedded MRAM non-volatile memory (NVM) technology, which...
Researchers Prove That 1Xnm STT-MRAM Could be Used in Automotives and Harsh Environments
Researchers at Tohoku University developed a new MTJ technology that could lead to a widening of application areas of STT-MRAM at 1X nm technology node...
VLSI: Imec presents a Manufacturable Solution for Field-free Switching Operation of Spin-Orbit Torque MRAM devices
This week, at the 2019 Symposia on VLSI Technology and Circuits (June 9-14, 2019), imec demonstrates field-free switching operation of spin-orbit torque MRAM (SOT-MRAM) devices...
Everspin Ships First Pre-Production 28 nm 1 Gb STT-MRAM Customer Samples
Everspin Technologies, Inc., a developer and manufacturer of Magnetoresistive RAM (MRAM), announced it has shipped pre-production customer samples of its 28 nm 1-Gigabit (Gb) Spin...
Researchers Develop Ultra-fast, 128Mb STT-MRAM
A research team at the Japanese Tohoku University has developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of...
Everspin Begins Volume Production of 40nm STT-MRAM
Everspin Technologies, a developer and manufacturer of discrete and embedded MRAM, has recorded revenue for its first 40nm 256Mb STT-MRAM products in the fourth...
IBM And Samsung Researchers Demonstrate ST-MRAM Scalability at 11nm
On the 20th anniversary of its invention at IBM Research, fabled nonvolatile "universal" magnetic random access memory (MRAM) is getting an upgrade. IBM announced that...
Toshiba Develops High-Speed MTJ Element for Non-Volatile STT-MRAM For 2X nm Generation Transistors
Toshiba has developed Magnetic Tunnel Junction (MTJ) elements for STT-MRAM non-volatile Magnetoresistive Random Access memory for 2X nm generation and beyond silicon transistors cache memory,...
