BeQuiet Jubiläum Banner 970x90
Breaking News

AORUS Gen5 10000 SSD Hit the Market with 10GB/s and Up! Nikon releases the NIKKOR Z 26mm f/2.8 and NIKKOR Z 85mm f/1.2 S Nikon releases a new black version of the Z fc APS-C size mirrorless camera Launch schedule of SIGMA 50mm F1.4 DG DN | Art Razer unveils the Viper Mini Signature Edition – a magnesium alloy gaming masterpiece

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map

Search form

Imec Boosts Performance of Beyond-Silicon Devices

Imec Boosts Performance of Beyond-Silicon Devices

Enterprise & IT Dec 10,2015 0

At this week’s IEEE IEDM conference, nano-electronics research center imec showcased new ways to boost the performance of advanced compound semiconductor logic devices, as the semiconductor industry tries to find solutions that enable 5nm technology nodes and beyond. Imec’s R&D program on advanced logic scaling is targeting the new and mounting challenges for performance, power, cost, and density scaling for future process technologies. One of the directions that imec is following, looks into beyond-Si solutions, such as integrating high-mobility materials into the channels of CMOS devices to increase their performance, and the integration challenges of these materials with silicon. Gate-All-Around Nanowire (GAA NW) FETs have been proven to offer significantly better short-channel electrostatics, and quantum-well FinFETs (with SiGe, Ge, or III-V channels) achieving high carrier mobility, are interesting concepts to increase device performance. Tunnel FETs, on the other hand, offering a steeper than 60mV/dec subthreshold swing, are a promising option for ultra-low power applications.

At IEDM, imec presented gate-all-around InGaAs Nanowire FETs (Lg=50nm) that performed at an average peak transconductance (gm) of 2200µS/µm with a SSSAT of 110mV/dec. Imec succeeded in increasing the performance by gate stack engineering using a novel gate stack ALD inter-layer (IL) material developed by ASM, and high pressure annealing. The novel IL/HfO2 stack achieved a 2.2 times higher gm for a device with a gate length (Lg) of 50nm, compared to the reference Al2O3/HfO2 stack.

Imec also presented a planar InGaAs homo-junction TFET with 70 percent Indium (In) content. The increase of In content from 53 to 70 percent in a 8nm channel, was found to significantly boost the performance of the device. A record ON-state current (ION) of 4µA/µm (IOFF = 100pA/µm, Vdd = 0.5V and Vd = 0.3V) with a minimum subthreshold swing (SSmin) of 60mV/dec at 300k was obtained for a planar homo-junction TFET device. It was also shown that subthreshold swing and transconductance in TFET devices were more immune to positive bias temperature instability (PBTI) compared to MOSFET devices.

Imec’s research into advanced logic scaling is performed in cooperation with imec’s partners in its core CMOS programs including GlobalFoundries, Intel, Micron, Panasonic, Qualcomm, Samsung, SK Hynix, Sony and TSMC.

Tags: imec
Previous Post
Twitter To Target Ads Even If You Are Not Logged In
Next Post
Asus Releases New Energy-efficient DVD Burner

Related Posts

  • Imec Uses Machine Learning Algorithms in Chip Design to Achieve cm Accuracy and Low-power Ultra Wideband Localization

  • Imec and ASML Demonstrate 24nm Pitch Lines With Single Exposure EUV Lithography

  • Protective Clothing with Sensors Warns Firefighters of Excessive Heat

  • Imec Presents Forksheet device as a Solution to Push Scaling Towards the 2nm Technology Node

  • Imex Says 2D Materials Could Allow Extreme Scaling for Logic and Memory Transistors

  • Imec Thin-film Image Sensor for the SWIR Could Make Smartphones and Autonomous Vehicles see the Impossible

  • Imec Showcases Silicon Photonics Portfolio For Future Data Center Interconnects

  • Imec and NUS to Collaborate on Chip-based Quantum Cryptography

BeQuiet Jubiläum Banner 300x600

 

Latest News

AORUS Gen5 10000 SSD Hit the Market with 10GB/s and Up!
PC components

AORUS Gen5 10000 SSD Hit the Market with 10GB/s and Up!

Nikon releases the NIKKOR Z 26mm f/2.8 and NIKKOR Z 85mm f/1.2 S
Cameras

Nikon releases the NIKKOR Z 26mm f/2.8 and NIKKOR Z 85mm f/1.2 S

Nikon releases a new black version of the Z fc APS-C size mirrorless camera
Cameras

Nikon releases a new black version of the Z fc APS-C size mirrorless camera

Launch schedule of SIGMA 50mm F1.4 DG DN | Art
Cameras

Launch schedule of SIGMA 50mm F1.4 DG DN | Art

Razer unveils the Viper Mini Signature Edition – a magnesium alloy gaming masterpiece
PC components

Razer unveils the Viper Mini Signature Edition – a magnesium alloy gaming masterpiece

Popular Reviews

Withings Thermo Wi-Fi-connected temporal thermometer

Withings Thermo Wi-Fi-connected temporal thermometer

EnGenius ECW230 Access Point

EnGenius ECW230 Access Point

Withings Body Plus Scale

Withings Body Plus Scale

Withings Sleep Analyzer

Withings Sleep Analyzer

EnGenius ECW230S AP

EnGenius ECW230S AP

Noctua NH-D12L CPU Cooler

Noctua NH-D12L CPU Cooler

Scythe Fuma 2 CPU Cooler

Scythe Fuma 2 CPU Cooler

be quiet! Pure Rock 2 FX

be quiet! Pure Rock 2 FX

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed