Samsung Highlights Its Latest 20nm DDR3 And SSDs Solutions
Samsung today highlighted its new "green line" of
storage and memory products in Seoul; the 20 nanometer (nm)
class DDR3 and 20nm-class SSDs based on SATA 6.0Gb/s and SAS
interfaces respectively.
In his keynote at the annual Memory Solution CIO Forum at the
Shilla hotel, Seoul, Korea, Wanhoon Hong, executive vice
president of Memory sales and marketing, Device Solutions,
Samsung Electronics, noted, "With the introduction of Samsung's
advanced green memory solutions, the shared value created
through the technology advances are adopted to PC platforms
enhancing consumer experience and thus contributing to the
expansion of an eco-friendly IT industry."
He added that, "Samsung will continue to proactively respond to diverse consumer needs with the timely development of differentiated next-generation green memory devices and solutions, and thus reinforce market leadership that adds to the evolving market of advanced premium memory solutions."
Samsung said that compared with a datacenters utilizing 40nm-class DRAM and HDDs, the new 20nm DDR3 and SSDs offer a six-fold overall performance increase while power consumption decreases by 20 percent on server systems and 60 percent on storage systems.
These performance benefits were achieved by incorporating Samsung's 20nm-class DDR3 technology and its latest enterprise SSD solutions; the SATA 6.0Gb/s interface SM843 for server systems and the SAS interface SM1625 for enterprise storage.
Following the announcement of its 20nm-class 2Gb DDR3 DRAM in September, 2011, Samsung initiated production of its 20nm-class 4Gb DDR3 last month, more than tripling its productivity compared to 40nm-class DDR3 on notebook PCs, and also marking a major turning point from the conventional 40nm-class and 30nm-class DRAM used in personal computers.
Samsung claims that by replacing the 40nm-class 4GB DDR3 and HDDs of current notebooks with Samsung?s 20nm-class 4GB DDR3 module paired with its latest 250-Gigabyte SSDs, the notebooks' performance will be comparable with newly launched ultrabooks and their battery life will be extended by approximately one hour.
He added that, "Samsung will continue to proactively respond to diverse consumer needs with the timely development of differentiated next-generation green memory devices and solutions, and thus reinforce market leadership that adds to the evolving market of advanced premium memory solutions."
Samsung said that compared with a datacenters utilizing 40nm-class DRAM and HDDs, the new 20nm DDR3 and SSDs offer a six-fold overall performance increase while power consumption decreases by 20 percent on server systems and 60 percent on storage systems.
These performance benefits were achieved by incorporating Samsung's 20nm-class DDR3 technology and its latest enterprise SSD solutions; the SATA 6.0Gb/s interface SM843 for server systems and the SAS interface SM1625 for enterprise storage.
Following the announcement of its 20nm-class 2Gb DDR3 DRAM in September, 2011, Samsung initiated production of its 20nm-class 4Gb DDR3 last month, more than tripling its productivity compared to 40nm-class DDR3 on notebook PCs, and also marking a major turning point from the conventional 40nm-class and 30nm-class DRAM used in personal computers.
Samsung claims that by replacing the 40nm-class 4GB DDR3 and HDDs of current notebooks with Samsung?s 20nm-class 4GB DDR3 module paired with its latest 250-Gigabyte SSDs, the notebooks' performance will be comparable with newly launched ultrabooks and their battery life will be extended by approximately one hour.
