Breaking News

ASUS Announces New 64GB Configuration of ASUS Ascent GX10 LIAN LI Announces Edge Platinum V2, Edge Gold V2, and GPU Cable Thermal Monitoring via Edge Hub ADV Razer Unveils the Huntsman V3 Pro Mini 8KHz ASRock DeskSlim Series Delivers RTX PRO Blackwell Performance in a Compact 5L Workstation Samsung Introduces Galaxy Tab S12 Series

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed

Search form

Toshiba and SanDisk Start Construction of Fab 5 for NAND 
Flash Memory

Toshiba and SanDisk Start Construction of Fab 5 for NAND Flash Memory

Enterprise & IT Jul 14,2010 0

Toshiba today announced that it has started construction of a fabrication facility (fab), Fab 5, at Yokkaichi Operations, its memory production facility in Mie Prefecture, with construction work scheduled for completion in Spring 2011. In addition, Toshiba and SanDisk have signed primary agreements for a new joint venture to operate in the Fab 5 facility.

Construction of the new fab reflects expectations for increasing demand for NAND flash memory for existing and emerging applications, such as smartphones and solid-state drives. Adding new production capacity will ensure that Toshiba and SanDisk are able to respond quickly to market expansion.

The fab building will be constructed in two phases, with the pace of investment reflecting market trends. On completion of its second phase, Fab 5 will be comparable to Fab 4, with a ground area of some 38,000m2. The partners have flexibility as to the extent and timing of their respective fab capacity ramps, and the output allocation will be in accordance with the proportionate level of equipment funding. The initial manufacturing process will be the leading-edge 20-nanometer generation, with subsequent generations to follow.

Fab 5 will have a quake-absorbing structure and is designed to impose minimal environmental impacts. Extensive use of LED lighting throughout the facility, energy-saving manufacturing equipment, and use of inverter-controlled pumps for semiconductor production equipment are expected to cut CO2 emissions to a level 12% lower than for Fab 4.

Yokkaichi Operations currently has four NAND flash memory fabs. Toshiba and SanDisk are currently ramping into the unused clean room space in Fab 4, and expect to reach full capacity of Fab 4 by the start of production in Fab 5.



Outline of Fab 5

Structure of building: 2-Story steel frame concrete, five floors
Ground area: Approximately 38,000m2
Total floor area: Approximately 187,000m2
Construction start: July 2010
Completion of first phase: Spring 2011 (Planned)

Outline of Yokkaichi Operations

Location: 800, Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: January 1992
General Manager: Koji Sato
Employees: Approximately 4,300
(as of end of March, 2010, regular employees only for Toshiba)
Site area: Approximately 436,800 m2 (including Fab 5)
Total floor area: Approximately 647,000m2 (including Fab 5)

Tags: ToshibaSanDisknand
Previous Post
Renesas Introduces Energy Efficient USB 3.0 Host Controller
Next Post
Sony Debuts First Consumer Interchangable Lens HD Camcorder

Related Posts

  • Toshiba launches Canvio Ready portable hard drive with partly recycled-material top cover

  • SanDisk High Endurance 512GB microSDXC

  • New 3D flash memory technology from KIOXIA and Sandisk achieves industry's highest bit density for QLC NAND

  • Sandisk Rolls Out a Trio of AI-Storage Announcements Ahead of FMS 2026

  • Kioxia and Sandisk Begin Production of 10th-Generation 3D Flash Memory Products at Kitakami Plant Fab2

  • Toshiba Demonstrates Storage Infrastructure for Scientific AI and Research at ISC 2026

  • SanDisk at NAB 2026

  • Toshiba Canvio Flex Portable Hard Drive, Now in Metallic Blue

Latest News

ASUS Announces New 64GB Configuration of ASUS Ascent GX10
Enterprise & IT

ASUS Announces New 64GB Configuration of ASUS Ascent GX10

LIAN LI Announces Edge Platinum V2, Edge Gold V2, and GPU Cable Thermal Monitoring via Edge Hub ADV
Cooling Systems

LIAN LI Announces Edge Platinum V2, Edge Gold V2, and GPU Cable Thermal Monitoring via Edge Hub ADV

Razer Unveils the Huntsman V3 Pro Mini 8KHz
PC components

Razer Unveils the Huntsman V3 Pro Mini 8KHz

ASRock DeskSlim Series Delivers RTX PRO Blackwell Performance in a Compact 5L Workstation
Enterprise & IT

ASRock DeskSlim Series Delivers RTX PRO Blackwell Performance in a Compact 5L Workstation

Samsung Introduces Galaxy Tab S12 Series
Consumer Electronics

Samsung Introduces Galaxy Tab S12 Series

Popular Reviews

Endorfy Thock V2 Wireless Keyboard

Endorfy Thock V2 Wireless Keyboard

The Quiet Technology Behind the Spin

The Quiet Technology Behind the Spin

SoundPeats Cove Pro

SoundPeats Cove Pro

Akaso Brave 8 Lite

Akaso Brave 8 Lite

SoundPeats C30

SoundPeats C30

Kioxia Exceria Plus G3 512GB microSD

Kioxia Exceria Plus G3 512GB microSD

be quiet! Dark Perk Mice

be quiet! Dark Perk Mice

XbotGo Chamaleon

XbotGo Chamaleon

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed