LED maker Bridgelux Inc and Toshiba have entered into an agreement under which Bridgelux will sell to Toshiba its GaN-on-Silicon technology and related assets. The companies also plan to strengthen and extend their technology collaboration, through an expanded licensing and manufacturing relationship.

In January, 2012, Bridgelux and Toshiba entered into a Joint Development and Collaboration Agreement for the development of GaN-on-Silicon LED technologies. Since then, Toshiba announced the achievement of world class performance for 8" GaN-on-Silicon LED wafers and mass production of white LEDs. Both of these milestones were achieved using Bridgelux's crystal growth and LED device technologies as well as Toshiba?s advanced silicon processes and manufacturing technologies.

The enhanced strategic relationship provides for new business opportunity through the expanded collaboration for next generation LED chips and packages, or platforms, based on the jointly developed GaN-on-Silicon technology, as well as a manufacturing arrangement securing Bridgelux a source of supply for GaN-on-Silicon-based LED chips.

The GaN-on-Silicon assets included in the sale, and the related Bridgelux employees, will remain onsite at Bridgelux's headquarters in Livermore after the transaction closes to assure continued technical and business collaboration between the companies.