Toshiba Develops High Speed NANO FLASH-100 Flash Memory for ARM Microcontrollers
Toshiba has developed the NANO FLASH-100 technology promising to further accelerate the operation of ARM-based embedded flash microcontrollers.
The rich functionality and high speed capabilities of embedded microcontrollers require flash memory with fast access rates. Toshiba's original NANO FLASH technology offers high speed programming based on NAND flash memory cell device technology; and NOR flash memory circuit technology. Now the Japanese company says it has subsequently brought this high-level performance to ARM-based microcontrollers.
The newly developed NANO FLASH-100 achieves a zero-wait cycle during random access at 100MHz operation. This allows the core in ARM-based microcontrollers to fully utilize the performance and code density of applications requiring high speed and large capacity memory.
Toshiba plans to follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products.
The newly developed NANO FLASH-100 achieves a zero-wait cycle during random access at 100MHz operation. This allows the core in ARM-based microcontrollers to fully utilize the performance and code density of applications requiring high speed and large capacity memory.
Toshiba plans to follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products.