Toshiba had announced its next generation of enterprise solid state drives (eSSDs) for the PX Series and also unveiled the first 256-gigabit (32gigabytes) 48-layer BiCS flash memory device that deploys 3-bit-per-cell (triple-level cell, TLC) technology. Starting with the new SSD, the new PX04S line features four serial-attached small computer system interface (SCSI) SAS eSSD models. The dual-ported 12Gbit/s SAS PX04S line offers random 4K performance with read IOPS up to 270K and write IOPS up to 145K. This is Toshiba?s first 12Gbit/s SAS SSD to deliver 3.84TB of operating capacity.

The PX04S line features four eSSD models ? PX04SHB, PX04SMB, PX04SVB and PX04SRB.

Targeted at applications requiring the highest levels of eSSD performance and endurance, the PX04SHB supports 25 complete drive writes per day (DWPD) with a one hundred percent random workload and is available in a range of capacities from 200GB to 1.6TB.

Mid-Endurance: environments, Toshiba?s PX04SMB provides very high levels of predictable performance to optimize system and application performance. The PX04SMB offers 10 DWPD with capacities up to 3.2TB and is suitable for online transaction processing (OLTP) and e-commerce.

The PX04SVB is optimized for read-intensive server and storage applications. Capable of three DWPD with capacities up to 3.84TB, PX04SVB SSDs are suited for read-intensive applications such as media streaming, data warehousing and web servers.

Targeted at read-intensive applications requiring one DWPD or less, the PX04SRB delivers features and performance suited for a range of enterprise and web-based workloads like video on demand (VOD) and data warehousing. The PX04SRB is available in capacities up to 3.84TB.

Sample shipment starts from today.

3D NAND

Seperately, Toshiba today unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. Toshiba says the he new device is the world?s first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.

BiCS FLASH is based on a 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds. The new 256Gb device is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centers.

Toshiba is currently ready for mass production of BiCS FLASH in a new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.

Toshiba's memoty partner SanDisk will also start shipping its 256 Gigabit (Gb) 3-bit-per-cell (X3) 48-layer 3D NAND chip in 2016.