Next-generation broadband applications require real-time processing of huge volumes of data, which can only be achieved with the support of large capacity, ultra high-speed memory chips. Toshiba meets these needs with its XDRTM DRAM. The company will continue to develop and commercialize XDRTM DRAM as a key memory device along with NAND flash memory and MCP.
"Toshiba has been playing a leadership role in realizing XDRTM DRAM technology," said Shozo Saito, Vice President of Memory Division, Semiconductor Company at Toshiba Corporation. "We were first in the world to sample first generation XDRTM DRAM in December 2003. We plan to mass-produce our second generation 512-megabit XDRTM DRAMs in the second half of 2005 to secure our leading position in this business area."
- Configuration: 4 megabit word x 8 banks x 16 bits (x4/x8/x16 programmable)
- Power Supply: 1.8V VDD
- Package Size: 1.27mm x 0.8mm pitch BGA
- Interface: DRSL (Differential Rambus Signal Level)
- Max. Data Rate: 4.8GHz
- Min. Cycle Time: 40ns (tRC)