Toshiba Corporation today announced a high performance DRAM that achieves the fastest data transfer rate yet attained by any memory device. The second generation 512-megabit XDRTM has a peak operating speed of 6.4GHz, and is designed for high-performance broadband applications, including digital consumer electronics, network systems and graphic systems. Samples of the new chip are currently available. The XDRTM DRAM is based on Rambus's XDR memory interface technology and offers an octal data rate (ODR), supporting transfers of eight data in a single clock cycle. The latest 512-megabit XDRTM DRAM (TC59YM916BKG) transfers data at 4.8GHz with a 1.8V VDD and supports peak operation of 6.4GHz, the fastest data transfer rate yet achieved: four times faster than the performance of 1.6GHz Graphic Double Data Rate (GDDR) memory chips and twelve times faster than best-in-class 533MHz PC memories.

Next-generation broadband applications require real-time processing of huge volumes of data, which can only be achieved with the support of large capacity, ultra high-speed memory chips. Toshiba meets these needs with its XDRTM DRAM. The company will continue to develop and commercialize XDRTM DRAM as a key memory device along with NAND flash memory and MCP.

"Toshiba has been playing a leadership role in realizing XDRTM DRAM technology," said Shozo Saito, Vice President of Memory Division, Semiconductor Company at Toshiba Corporation. "We were first in the world to sample first generation XDRTM DRAM in December 2003. We plan to mass-produce our second generation 512-megabit XDRTM DRAMs in the second half of 2005 to secure our leading position in this business area."

Major Specifications

- Configuration: 4 megabit word x 8 banks x 16 bits (x4/x8/x16 programmable)
- Power Supply: 1.8V VDD
- Package Size: 1.27mm x 0.8mm pitch BGA
- Interface: DRSL (Differential Rambus Signal Level)
- Max. Data Rate: 4.8GHz
- Min. Cycle Time: 40ns (tRC)