Samsung 750 EVO Launches As A Budget, High-performing SSD
The Samsung 750 EVO SSD has now officially launched worldwide, offering an affordable but fast memory storage option. Samsung’s new solid state drives come with suggested prices of just $55 for 120GB and $75 for 250GB. Both prices will likely fall even further once the drives spend some time on retail shelves.
Basedp on 16nm TLC NAND memory (not 3D NAND), the 750 EVO will be available in 120GB and 250GB sizes. Both capacities are listed as having 256MB of DRAM, where the previous 850 EVO 250GB model has 512MB of DRAM.
The 750 EVO's performance specifications are almost identical to the 850 EVOs of the same capacity. The 4KB random write is slower, but read speeds are the same. The drive's SLC write cache should help the 750 EVO mainatain a similar write perrformance with the 850 EVO parts.
MZ-750120 | MZ-750250 | ||
---|---|---|---|
General Feature | Application | Client PCs | |
Capacity | 120 GB | 250 GB | |
Form Factor | 2.5 inch | ||
Interface | SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface | ||
Dimension (WxHxD) | 100 X 69.85 X 6.8 (mm) | ||
Weight | Max 45.0g | ||
NAND Type | Samsung NAND Flash Memory | ||
Controller | Samsung MGX controller | ||
Cache Memory | Samsung 256MB DDR3 DRAM | ||
Special Feature | TRIM Support | TRIM Supported | |
S.M.A.R.T Support | S.M.A.R.T Supported | ||
GC (Garbage Collection) | Auto Garbage Collection Algorithm | ||
Encryption Support | AES 256-bit Full Disk Encryption (FDE) TCG/Opal v2.0, Encrypted Drive (IEEE1667) | ||
WWN Support | Yes | ||
Device Sleep Mode Support | Yes | ||
Performance | Sequential Read | Up to 540 MB/sec | |
Sequential Write | Up to 520 MB/sec | ||
Random Read (4 KB, QD 32) |
Up to 94,000 IOPS | Up to 97,000 IOPS | |
Random Write (4 KB, QD 32) |
Up to 88,000 IOPS | Up to 88,000 IOPS | |
Random Read (4 KB, QD 1) |
Up to 10,000 IOPS | Up to 10,000 IOPS | |
Random Write (4 KB, QD 1) |
Up to 35,000 IOPS | Up to 35,000 IOPS | |
Environment | Power Consumption | Active Read/Write (Average): 2.1W / 2.4W, Idle: 50mW, Device Sleep: 6mW |
Active Read/Write (Average): 2.4W / 2.8W, Idle: 50mW, Device Sleep: 6mW |
Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) | ||
Operating Temperature | 0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended) | ||
Shock | 1500G, duration 0.5m sec, 3 axis | ||
Software | Management SW | Magician Software for SSD management | |
Installation Kit | Not Available | ||
Warranty | 3 Year Limited Warranty or 35TBW Limited Warranty (Whichever comes first) |
Samsung is promising sequential read speeds of up to 540MBps and write speeds of up to 520MBps, thanks to the company’s TurboWrite technology.
On the downside, TLC NAND wears faster than the MLC tech in Samsung’s pricier 850 EVO line - though the 750 EVO will still last for years and years under normal use, barring some sort of hardware failure.
In addition, the 750 EVO keeps the encryption capabilities fully enabled, as many budget drives lack hardware encryption support.