Samsung's 4bit/cell flash is on the way and according to the company, the QLC (quad-level cell) NAND chip will contain more information at a...

Intel delivered updates at its Technology and Manufacturing Day held in Beijing, China, on Sept. 19, with disclosures to include power and performance updates...

Samsung unveiled plans for a terabit 3D-NAND chip that it will ship next year as well as dense solid-state drives using its current chips....

Western Digital has developed four bits per cell, X4, flash memory architecture offering on 64-layer 3D NAND, BiCS3, technology.

Building on the company's...

Toshiba has developed the first BiCS FLASH three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology.

...

Toshiba has developed a prototype sample of 96-layer BiCS FLASH three-dimensional (3D) flash memory with a stacked structure with 3-bit-per-cell (TLC) technology. In addition,...

Western Digital has successfully developed its next-generation 3D NAND technology, BiCS4, with 96 layers of vertical storage capability.

The company will start sampling...

Samsung Electronics is considering adding 3D NAND memory chip production capacity at its manufacturing base in China following the first established in Xi'an in...

Toshiba will debut its demonstration of the new 64-layer BiCS FLASH 3D technology on an XG Series client Non-Volatile Memory Express 2 (NVMe) Peripheral...

3D-NAND will formally become the mainstream architecture of NAND Flash memory in the third quarter of 2017 with its share in the total NAND...