Toshiba Delivers First SSD Using 96-Layer 3D Flash Memory
The...
Western Digital and Toshiba Begin Sampling 96-layer QLC NAND
Implemented for the 96-layer BiCS device, the QLC technology delivers the...
Micron and Intel Deliver First 1Tb - 4bits/cell QLC 3D NAND Die
Micron Technology, Inc. and Intel today announced production and shipment of the first 4bits/cell 3D NAND technology, which leverages a 64-layer structure to achieve...
Samsung Expands Xian Flash Memory Plant
Samsung Electronics will expand the capacity of NAND flash memory production in its complex in Xian, China, to ensure its leading position in the...
SK Hynix Starts Sampling Enterprise SSDs with its 72-Layer 512Gb 3D NAND Flash
SK Hynix Inc. recently completed developing a 4TB enterprise SATA Solid State Drive ('eSSD'), featuring 72-Layer 512Gb (Gigabits) 3D NAND Flash chips.
The...
Tsinghua Unigroup May License 3D NAND flash Technology From Intel
Chinese may finally get their hand on technology for the development of 3D NAND flash chips, with Tsinghua Unigroup to reportedly license the corresponding...
Micron and Intel to Limit Their NAND Memory Joint Development Program
Micron and Intel today announced that will develop 3D NAND independently after 2019, ending their 3D NAND joint development partnership.
The companies have...
Toshiba to Prepare New Semiconductor Fabrication Facility
Toshiba is going ahead with a forward-looking plan for a new memory fabrication facility in Kitakami, Iwate prefecture.
Toshiba Memory Corporation (TMC), a...
Toshiba Unveils UFS Devices Based on 64-Layer, 3D Flash Memory
Toshiba has started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory's 64-layer, BiCS FLASH 3D flash memory.
The new UFS devices meet...